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MMBT5401LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
* Pb-Free Packages are Available
MAXIMUM RATINGS
Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value -150 -160 -5.0 -500 Unit Vdc Vdc Vdc mAdc
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COLLECTOR 3 1 BASE 2 EMITTER
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate Above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate Above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C 2L = Device Code M = Month Code SOT-23 (TO-236) CASE 318 STYLE 6 2L M
ORDERING INFORMATION
Device MMBT5401LT1 MMBT5401LT1G MMBT5401LT3 MMBT5401LT3G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel
1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2005
1
January, 2005 - Rev. 4
Publication Order Number: MMBT5401LT1/D
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector -Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCB = -120 Vdc, IE = 0) (VCB = -120 Vdc, IE = 0, TA = 100C) V(BR)CEO -150 V(BR)CBO -160 V(BR)EBO -5.0 ICES - - -50 -50 nAdc mAdc - - Vdc - Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = -1.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -50 mAdc, VCE = -5.0 Vdc) Collector -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE 50 60 50 VCE(sat) - - VBE(sat) - - -1.0 -1.0 -0.2 -0.5 Vdc - 240 - Vdc -
SMALL-SIGNAL CHARACTERISTICS
Current -Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -10 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Noise Figure (IC = -200 mAdc, VCE = -5.0 Vdc, RS = 10 W, f = 1.0 kHz) fT 100 Cobo - hfe 40 NF - 8.0 200 dB 6.0 - 300 pF MHz
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MMBT5401LT1
200 150 TJ = 125C h FE, CURRENT GAIN 100 70 50 -55 C 30 20 VCE = - 1.0 V VCE = - 5.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 25C
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
Figure 2. Collector Saturation Region
103 IC, COLLECTOR CURRENT ( A) 102 101 TJ = 125C 100 10-1 10-2 10-3 0.3 75C REVERSE 25C FORWARD VCE = 30 V IC = ICES
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.6
0.7
Figure 3. Collector Cut-Off Region
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MMBT5401LT1
V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 qVB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVC for VCE(sat) TJ = - 55C to 135C
Figure 4. "On" Voltages
Figure 5. Temperature Coefficients
10.2 V Vin 10 ms INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 mF 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout
C, CAPACITANCE (pF)
VBB +8.8 V
VCC -30 V
100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Cibo
TJ = 25C
Cobo
Values Shown are for IC @ 10 mA
10
20
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20
2000 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 50 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V
td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30
10 0.2 0.3 0.5
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
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MMBT5401LT1
PACKAGE DIMENSIONS
SOT-23-3 (TO-236) CASE 318-08 ISSUE AK
A L
3 1 2
BS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
V
G C D H K J
DIM A B C D G H J K L S V
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT5401LT1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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MMBT5401LT1/D

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